1. Material Scientific Research and Structural Stability
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic composed of silicon and carbon atoms prepared in a tetrahedral lattice, primarily in hexagonal (4H, 6H) or cubic (3C) polytypes, each showing outstanding atomic bond strength.
The Si– C bond, with a bond power of approximately 318 kJ/mol, is among the strongest in structural porcelains, providing exceptional thermal security, solidity, and resistance to chemical strike.
This durable covalent network causes a material with a melting point going beyond 2700 ° C(sublimes), making it among the most refractory non-oxide porcelains offered for high-temperature applications.
Unlike oxide ceramics such as alumina, SiC preserves mechanical stamina and creep resistance at temperatures above 1400 ° C, where several metals and standard ceramics begin to soften or degrade.
Its low coefficient of thermal growth (~ 4.0 × 10 ⁻⁶/ K) combined with high thermal conductivity (80– 120 W/(m · K)) allows rapid thermal cycling without disastrous breaking, a vital feature for crucible efficiency.
These inherent residential properties originate from the balanced electronegativity and comparable atomic dimensions of silicon and carbon, which advertise a highly secure and largely loaded crystal framework.
1.2 Microstructure and Mechanical Resilience
Silicon carbide crucibles are commonly fabricated from sintered or reaction-bonded SiC powders, with microstructure playing a definitive function in resilience and thermal shock resistance.
Sintered SiC crucibles are produced via solid-state or liquid-phase sintering at temperatures over 2000 ° C, commonly with boron or carbon ingredients to improve densification and grain border cohesion.
This process yields a totally thick, fine-grained structure with marginal porosity (
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